Strain field in GaAs/GaN wafer-bonding interface and its microstructure

Chinese Physics Letters

Volumn 24, Issue 12, 2007, Pages 3481-3484

  Wu, Di ^a   Guo, Xia ^a   Gu, Xiao Ling ^a   Li, Yi Bo ^a   Shen, Guang Di ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GALLIUM ARSENIDE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; STRAIN; WAFER BONDING;

BONDING INTERFACES; CROSS SECTIONAL IMAGE; ELECTRON BACK SCATTER DIFFRACTION; ELECTRON BACKSCATTER DIFFRACTION; KIKUCHI PATTERNS; ROTATION ANGLES; SENSITIVE PARAMETER; STRAIN FIELDS;

III-V SEMICONDUCTORS;

EID: 37249060292     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/12/052     Document Type: Article

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