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Volumn 27, Issue 11, 2006, Pages 1906-1910

Analysis of Si/GaAs bonding stresses with the finite element method

Author keywords

Bonding; Finite element analysis; Thermal stress

Indexed keywords

BONDING; CALCULATIONS; FINITE ELEMENT METHOD; PEELING; SEMICONDUCTING GALLIUM ARSENIDE; SHEAR STRESS; THERMAL EXPANSION; THERMAL STRESS;

EID: 33845789187     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (7)
  • 1
    • 0022787978 scopus 로고
    • tresses in bi-metal thermostats
    • Suhir E. Stresses in bi-metal thermostats. J Appl Mech, 1986, 53: 657
    • (1986) J Appl Mech , vol.53 , pp. 657
    • Suhir, E.1
  • 2
    • 0023984412 scopus 로고
    • An approximated analysis of stresses in multilayered elastic thin films
    • Suhir E. An approximated analysis of stresses in multilayered elastic thin films. J Appl Mech, 1988, 55: 143
    • (1988) J Appl Mech , vol.55 , pp. 143
    • Suhir, E.1
  • 3
    • 0000256646 scopus 로고
    • Elastic and viscoelastic analysis of stress in thin film
    • Liu H C, Mursrka S P. Elastic and viscoelastic analysis of stress in thin film. J Appl Mech, 1992, 72: 3458
    • (1992) J Appl Mech , vol.72 , pp. 3458
    • Liu, H.C.1    Mursrka, S.P.2
  • 4
    • 33845784419 scopus 로고    scopus 로고
    • Integrating U-V compound semiconductors with silicon using wafer bonding
    • Zhou Yucai. Integrating U-V compound semiconductors with silicon using wafer bonding. ProQuest Database, 2000: 38
    • (2000) ProQuest Database , pp. 38
    • Zhou, Y.1
  • 5
    • 8344276832 scopus 로고    scopus 로고
    • Low-temperature bonding of silicon-oxide-covered wafers using diluted HF etching
    • Tong Q Y, Gan Q, Fountain Q, et al. Low-temperature bonding of silicon-oxide-covered wafers using diluted HF etching. Appl Phys Lett, 2004, 85: 2462
    • (2004) Appl Phys Lett , vol.85 , pp. 2462
    • Tong, Q.Y.1    Gan, Q.2    Fountain, Q.3
  • 6
    • 0030087106 scopus 로고    scopus 로고
    • Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding
    • Wada H, Kamijoh T. Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding. IEEE Photonics Technol Lett, 1996, 8(2): 173
    • (1996) IEEE Photonics Technol Lett , vol.8 , Issue.2 , pp. 173
    • Wada, H.1    Kamijoh, T.2
  • 7
    • 1942445426 scopus 로고    scopus 로고
    • Theoretical analysis of stresses in interface of bonded wafers
    • Chinese source
    • Zhou Zhen, Kong Xijun, Huang Yongqing, et al. Theoretical analysis of stresses in interface of bonded wafers. Chinese Journal of Semiconductors, 2003, 24(11): 1176 (in Chinese)
    • (2003) Chinese Journal of Semiconductors , vol.24 , Issue.11 , pp. 1176
    • Zhou, Z.1    Kong, X.2    Huang, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.