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Volumn 54, Issue 6, 2007, Pages 2463-2467

Response of a MEMS microshutter operating at 60 K to ionizing radiation

Author keywords

Insulators; Low temperature; Micro electro mechanical system; Total ionizing dose

Indexed keywords

MICRO-ELECTRO-MECHANICAL SYSTEMS; TOTAL IONIZING DOSE;

EID: 37249053351     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910040     Document Type: Conference Paper
Times cited : (14)

References (11)
  • 3
    • 0032312007 scopus 로고    scopus 로고
    • Radiation response of a MEMS accelerometer: An electrostatic force
    • Dec
    • L. D. Edmonds, G. M. Swift, and C. I. Lee, "Radiation response of a MEMS accelerometer: An electrostatic force," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2779-2788, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci , vol.45 , Issue.6 , pp. 2779-2788
    • Edmonds, L.D.1    Swift, G.M.2    Lee, C.I.3
  • 4
    • 0030374182 scopus 로고    scopus 로고
    • Total dose effects on micromechanical systems (MEMS): Accelerometers
    • Dec
    • C. I. Lee, A. H. Johnson, W. C. Tang, C. E. Barnes, and J. Lyke, "Total dose effects on micromechanical systems (MEMS): Accelerometers, " IEEE Trans. Nucl. Sci., vol. 43, no.'6, pp. 3127-3132, Dec. 1996.
    • (1996) IEEE Trans. Nucl. Sci , vol.43 , Issue.6 , pp. 3127-3132
    • Lee, C.I.1    Johnson, A.H.2    Tang, W.C.3    Barnes, C.E.4    Lyke, J.5
  • 7
    • 0018158325 scopus 로고
    • Enhanced flatband voltage recovery in hardened thin MOS capacitors
    • Dec
    • H. E. Boesch, F. B. McLean, J. M. McGarrity, and P. S. Winokur, "Enhanced flatband voltage recovery in hardened thin MOS capacitors," IEEE Trans. Nucl. Sci., vol. NS-25, no. 6, p. 1239, Dec. 1978.
    • (1978) IEEE Trans. Nucl. Sci , vol.NS-25 , Issue.6 , pp. 1239
    • Boesch, H.E.1    McLean, F.B.2    McGarrity, J.M.3    Winokur, P.S.4
  • 8
    • 0021481638 scopus 로고
    • The origin of interfacial charging in irradiated silicon nitride capacitors
    • R. C. Hughes, "The origin of interfacial charging in irradiated silicon nitride capacitors," J. Appl. Phys., vol. 56, pp. 1226-1232, 1984.
    • (1984) J. Appl. Phys , vol.56 , pp. 1226-1232
    • Hughes, R.C.1
  • 9
    • 0018063509 scopus 로고
    • Response of MNOS capacitors to ionizing radiation at 80 K
    • Dec
    • N. S. Saks, "Response of MNOS capacitors to ionizing radiation at 80 K," IEEE Trans. Nucl. Sci., vol. NS-24, no. 6, pp. 1226-1232, Dec. 1978.
    • (1978) IEEE Trans. Nucl. Sci , vol.NS-24 , Issue.6 , pp. 1226-1232
    • Saks, N.S.1
  • 10
    • 0001080299 scopus 로고
    • Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors
    • Mar
    • R. C. Hughes, W. R. Dawes, W. J. Meyer, and S. W. Yoon, "Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors," J. Appl. Phys., vol. 65, pp. 1972-1976, Mar. 1989.
    • (1989) J. Appl. Phys , vol.65 , pp. 1972-1976
    • Hughes, R.C.1    Dawes, W.R.2    Meyer, W.J.3    Yoon, S.W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.