Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K

Solid-State Electronics

Volumn 41, Issue 4, 1997, Pages 659-661

  Simoen, E ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; LOW TEMPERATURE OPERATIONS; PARAMETER ESTIMATION; SEMICONDUCTOR DOPING;

LIGHTLY DOPED DRAIN (LDD) DEVICES;

MOSFET DEVICES;

EID: 0031125603     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00225-0     Document Type: Article

References (10)

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2. Y. Taur, D. S. Zicherman, D. R. Lombardi, P. J. Restle, C. H. Hsu, H. I. Hanafi, M. R. Wordeman, B. Davari and G. G. Shahidi, IEEE Electron. Dev. Lett. 13, 267 (1992).
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