Mechanism of de-activation and clustering of B in Si at extremely high concentration

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 50-54

  Romano, L ^a   Piro, A M ^a   Privitera, V ^b   Rimini, E ^a,b   Fortunato, G ^c   Svensson, B G ^d   Foad, M ^e   Grimaldi, M G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c IFN CNR   (Italy)

^d UNIVERSITY OF OSLO   (Norway)

^e APPLIED MATERIALS INC   (United States)

Author keywords

Boron; Channeling; Clusters; Electrical characterization; Laser annealing; Silicon

Indexed keywords

CARRIER MOBILITY; COMPLEXATION; CONCENTRATION (PROCESS); PRECIPITATION (CHEMICAL); REACTION KINETICS; SILICON;

CHANNELING; CLUSTERS; ELECTRICAL CHARACTERIZATION; LASER ANNEALING; NUCLEAR REACTION ANALYSES;

BORON;

EID: 33751351926     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.012     Document Type: Article

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