Design and fabrication of 4H-SiC RF MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3138-3145

  Gudjónsson, Gudjón I ^a   Allerstam, Fredrik ^a   Sveinbjörnsson, Einar Ö ^a   Hjelmgren, Hans ^a   Nilsson, Per Åke ^a   Andersson, Kristoffer ^a   Zirath, Herbert ^a   Rödle, Thomas ^b   Jos, Rik ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

HF amplifiers; MOSFETs; Power MOSFETs; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

EXTRINSIC TRANSITION; HF AMPLIFIERS; OUTPUT POWER; POWER MOSFETS;

MOSFET DEVICES;

EID: 36949020047     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908547     Document Type: Article

References (11)

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