Interfacial degradation mechanism of Au/Al and alloy/Al bonds under high temperature storage test: Contamination, epoxy molding compound, wire and bonding strength

IEEE Transactions on Components and Packaging Technologies

Volumn 30, Issue 4, 2007, Pages 731-744

  Park, Jongwoo ^a   Cha, Hyun Joon ^a   Kim, Back Sung ^a   Jo, Yong Bum ^a   Park, June Kyun ^a   Kim, Sam Young ^a   Shin, Shang Cheol ^a   Shin, Man Young ^a   Ouh, Kyung Il ^a   Jeon, Hyungoo ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Activation energy; Au Al bond; Au Al bond; Ball shear; Contamination; Epoxy insulation; Epoxy molding compound (EMC); Failure analysis; Flame retardant; High temperature storage (HTS); High temperature techniques; Interfacial degradation; Quad flat package (QFP); Surface energy; Void; wire pull; Wire pull

Indexed keywords

ALUMINUM ALLOYS; DEGRADATION; EPOXY RESINS; FAILURE ANALYSIS; FLAME RETARDANTS; HIGH TEMPERATURE TESTING; INTERMETALLICS; SHEET MOLDING COMPOUNDS;

BONDING STRENGTH; EPOXY MOLDING COMPOUND (EMC); HIGH TEMPERATURE STORAGE TEST; INTERFACIAL DEGRADATION MECHANISM; QUAD FLAT PACKAGE (QFP);

BONDING;

EID: 36849074683     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2007.906318     Document Type: Article

References (15)

1. M. M. Khan, T. S. Tarter, and H. Fatemi, "Aluminum bond pad contamination by thermal outgassing of organic material from silver-filled epoxy adhesives," IEEE Trans. Compon., Hybrids, Packag. Technol., vol. CHPT-12, no. 4, pp. 586-592, Dec. 1987.
2. T. D. Hund, "Thermosonic gold-ball bond accelerated life test," in Proc. IEEE 40th Electron. Comp. Tech. Conf., 1990, pp. 43-44.
3. S. K. Kang, "Gold-to-Aluminum bonding for TAB application," IEEE Trans. Compon. Packag. Technol., vol. 15, no. 6, pp. 998-1004, Dec. 1992.
4. G. V. Clatterbraugh, J. A. Weiner, and H. K. Charles, Jr., "Gold-Aluminum intermetallics: Ball bond shear test and thin film reaction couples," IEEE Trans. Compon. Tackag. Technol., vol. CHMT-7, no. 4, pp. 349-356, Dec. 1984.
5. P. McCluskey and K. Mensah et al., "Reliability of commercial plastic encapsulated microelectronics at temperatures form 125 C to 300 C," in Proc. IEEE Aerosp. Conf., 2000, pp. 445-450.
6. L. Lantz, II and M. Pecht, "Ion transport in encapsulants used in microcircuit packaging," IEEE Trans. Compon. Packag. Technol., vol. 26, no. 1, pp. 199-205, Mar. 2003.
7. A. A. Gallo, "Effect of mold compound components on moisture degradation of gold-aluminum bonds in epoxy encapsulated devices," in Proc. IEEE Int. Rel. Phys. Symp., 1990, pp. 244-251.
8. R. Gale, "Epoxy degradation induced Au - Al intermetallic void formation in plastic encapsulated MOS memories," in Proc. IEEE Int. Rel. Phys. Symp., 1984, pp. 37-47.
9. K. N. Ritz, W. T. Stacy, and E. K. Broadbent, "The microstructure of ball bond corrosion of failure," in Proc. IEEE Int. Rel. Phys. Symp. 1987, pp. 28-33.
10. M. Khan, H. Fatemi, J. Romero, and E. Delenia, "Effect of high thermal stability mold material on the gold-aluminum bond reliability epoxy encapsulated VLSI device," in Proc. IEEE Int. Rel. Phys. Symp., 1988, pp. 40-49.
11. T. Uno and K. Tatsumi, "Thermal reliability of gold-aluminum bonds encapsulated in bi-phenyl epoxy resin," Microelectro. Rel., vol. 40, pp. 145-153, 2003.
12. E. Imastao, M. Araki, I. Shimize, and Y. Ohno, "Effect of mold resin on reliability in gold-aluminum bonding," in Proc. IEEE 48th Electron. Comp. Technol. Conf., 1998, pp. 338-344.
13. M. Ohring, Materials Science of Thin Films. New York: Academic, 2002.
14. L. M. Lees, Reliability: Probabilistic Models and Statistical Methods Englewood Cliffs, NJ: Prentice-Hall, 1995.
15. H. Chang, K. Hsieh, T. Martens, and A. Yang, "Wire-bond void formation during temperature aging," IEEE Trans. Compon. Packag. Technol., vol. 27, no. 1, pp. 155-160, Mar. 2000.