Silicon germanium CMOS optoelectronic switching device: Bringing light to latch

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3252-3259

  Okyay, Ali K ^a   Kuzum, Duygu ^a   Latif, Salman ^a   Miller, David A B ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Germanium; Integrated optoelectronics; Metal oxide semiconductor field effect transistor (MOSFET) switches; MOSFET; Optical interconnections; Optical logic devices; Optical receivers; Optoelectronic (OE) devices; Optoelectronic devices; Photodetectors (PDs); Photonic switching systems; Semiconductor devices; Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; MOSFET DEVICES; OPTICAL INTERCONNECTS; OPTICAL RECEIVERS; OPTICAL SWITCHES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS;

OPTICAL LOGIC DEVICES; OPTOELECTRONIC SWITCHING DEVICE; PHOTONIC SWITCHING SYSTEMS;

OPTOELECTRONIC DEVICES;

EID: 36849073128     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908903     Document Type: Article

References (17)

1. H. Cho, P. Kapur, and K. C. Saraswat, "Power comparison between highspeed electrical and optical interconnects for interchip communication," J. Lightw. Technol., vol. 22, no. 9, pp. 2021-2033, Sep. 2004.
2. H. Cho, K. Koo, P. Kapur, and K. C. Saraswat, "The delay, energy, and bandwidth comparisons between copper, carbon nanotube, and optical interconnects for local and global wiring application," in Int. Interconnect Technol. Conf., IEEE 2007, Jun. 4-6, 2007, pp. 135-137.
3. D. A. B. Miller, "Rationale and challenges for optical interconnects to electronic chips," Proc. IEEE, vol. 88, no. 6, pp. 728-749, Jun. 2000.
4. Y.-H. Kuo, Y. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, "Strong quantum-confined Stark effect in germanium quantum-well structures on silicon," Nature, vol. 437, no. 7063, pp. 1334-1336, 2005.
5. A. K. Okyay, A. Nayfeh, N. Ozguven, T. Yonehara, A. Marshall, P. C. McIntyre, and K. C. Saraswat, "Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si," in Proc. IEEE LEOS, Montreal, QC, Canada, 2006, pp. 460-461.
6. Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. Luan, and L. C. Kimerling, "Strain-induced band gap shrinkage in Ge grown on Si substrate," Appl. Phys. Lett., vol. 82, no. 13, pp. 2044-2046, Mar. 2003.
7. A. Bhatnagar, C. Debaes, H. Thienpont, and D. A. B. Miller, "Receiverless detection schemes for optical clock distribution," Proc. SPIE, vol. 5359, no. 1, pp. 352-359, 2004.
8. H. Cho, P. Kapur, and K. C. Saraswat, "The impact of technology on power for high-speed electrical and optical interconnects," in Proc. IEEE IITC, Burlingame, CA, 2005, pp. 177-179.
9. M. Haurylau, C. Q. Chen, H. Chen, J. D. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, "On-chip optical interconnect roadmap: Challenges and critical directions," IEEE J. Sel. Topics Quantum Electron., vol. 12, no. 6, pp. 1699-1705, Nov./Dec. 2006.
10. A. Wang, "A low thermal budget polycrystalline silicon-germanium/ silicon thin film transistor technology," Ph.D. dissertation, Dept. Electr. Eng., Stanford Univ., Stanford, CA, 1998.
11. T. A. Langdo, C. W. Leitz, M. T. Currie, A. Lochtefeld, D. A. Antoniadis, and E. A. Fitzgerald, "High quality Ge on Si by epitaxial necking," Appl. Phys. Lett., vol. 76, no. 25, pp. 3700-3702, Jun. 2000.
12. 2 nanotemplate using solid source molecular beam epitaxy," Appl. Phys. Lett., vol. 83, no. 24, pp. 5032-5034, Dec. 2003.
13. Y C. Liu, M. D. Deal, and J. D. Plummer, "High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates," Appl. Phys. Lett., vol. 84, no. 14, pp. 2563-2565, Apr. 2004.
14. Y. C. Liu, M. D. Deal, and J. D. Plummer, "Rapid melt growth of germanium crystals with self-aligned microcrucibles on Si substrates," J. Electrochem. Soc., vol. 152, no. 8, pp. G688-G693, 2005.
15. C. M. Yang and H. A. Atwater, "Selective solid phase crystallization for control of grain size and location in Ge thin films on silicon dioxide," Appl. Phys. Lett., vol. 68, no. 24, pp. 3392-3394, Jun. 1996.
16. International Technology Roadmap for Semiconductors (ITRS), 2001 523 Edition. [Online]. Available: http://www.itrs.net/Links/2001ITRS/ Home.htm
17. L. Tang, A. K. Okyay, J. A. Matteo, Y. Yuen, K. C. Saraswat, L. Hesselink, and D. A. B. Miller, "C-shaped nano-aperture-enhanced germanium photodetector," Opt. Lett., vol. 31, no. 10, pp. 1519-1521, 2006.