Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 641-643

  Itoh, Takashi ^a   Kawasaki, Takahiro ^a   Takai, Yuta ^a   Yoshida, Norimitsu ^a   Nonomura, Shuichi ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

a Si:H based solar cells; Carbon source gas; Hetero structured SiCX; Hot wire CVD

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; HETEROJUNCTIONS; SILICON CARBIDE; SOLAR CELLS;

CARBON SOURCE GAS; DARK CONDUCTIVITY; OPTICAL ENERGY GAPS; WINDOW LAYER MATERIALS;

METALLIC FILMS;

EID: 36749031125     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.221     Document Type: Article

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