Electronic properties of improved amorphous silicon-germanium alloys deposited by a low temperature hot wire chemical vapor deposition process

Materials Research Society Symposium Proceedings

Volumn 862, Issue , 2005, Pages 49-54

  Datta, Shouvik ^a   Cohen, J David ^a   Xu, Yueqin ^b   Mahan, A H ^b  

^a UNIVERSITY OF OREGON   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; SUBSTRATES;

FILAMENT TEMPERATURES; LOW SUBSTRATE TEMPERATURES;

SILICON ALLOYS;

EID: 30544439628     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-862-a7.2     Document Type: Conference Paper

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