Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  No P ^a   Salem, B ^a   Delamadeleine, E ^a   Jalabert, D ^a   Calvo, V ^a   Maurizio, C ^b   D'Acapito, F ^b  

^a CEA GRENOBLE   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ERBIUM COMPOUNDS; LUMINESCENCE; SILICA; SILICON; SPECTROSCOPIC ANALYSIS;

COEVAPORATION; ER-DOPED SILICON MONOXIDE THIN FILMS; INTERATOMIC DISTANCE; RADIATIVE DEEXCITATION;

THIN FILMS;

EID: 36649013683     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817512     Document Type: Article

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