Impact of interface crystallization on inelastic tunneling in AlAl Ox CoFeB

Applied Physics Letters

Volumn 91, Issue 22, 2007, Pages

  Paluskar, P V ^a   Bloom, F L ^a   Kohlhepp, J T ^a   Swagten, H J M ^a   Koopmans, B ^a   Snoeck, E ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; BIAS VOLTAGE; COBALT COMPOUNDS; CRYSTALLIZATION; ELECTRIC EXCITATION; ELECTRODES;

INELASTIC TUNNELING; MAGNONS; QUASIAMORPHOUS INTERFACES;

TUNNEL JUNCTIONS;

EID: 36549068674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817229     Document Type: Article

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