Investigations of stress sensitivity of 0.12 CMOS technology using process modeling

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 831-834

  Senez, V ^a   Hoffmann, T ^a   Robilliart, E ^b   Bouche, G ^b   Jaouen, H ^b   Lunenborg, M ^c   Carnevale, G ^d  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY; MATHEMATICAL MODELS; SENSITIVITY ANALYSIS; STRESS ANALYSIS; TWO DIMENSIONAL;

MECHANICAL STRESS; STRESS SENSITIVITY;

CMOS INTEGRATED CIRCUITS;

EID: 0035714855     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979642     Document Type: Article

References (3)

1. Elasto-plastic modeling of microelectronics materials for accurate prediction of the mechanical stresses in advanced silicon technologies
2. Mechanical properties of thin film materials for the 2D numerical analysis of deep submicron CMOS technologies
3. Multidimensional modeling and simulation of mechanical stresses in advanced silicon technologies