Analysis of deep submicron CMOS transistor Vtlin and Idsat versus channel width

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 3, Issue , 2005, Pages

  Tan, Philip Beow Yew ^a,b,c   Kordesch, Albert Victor ^a,b   Sidek, Othman ^a,c  

^a IEEE   (Malaysia)

^b SILTERRA MALAYSIA SDN BHD   (Malaysia)

^c SCHOOL OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

Delta width; DW; Inverse narrow width; INW; STI mechanical stress; X stress; Y stress

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; THRESHOLD VOLTAGE;

DELTA WIDTH (DW); INVERSE NARROW WIDTH (INW); STI MECHANICAL STRESS;

MOSFET DEVICES;

EID: 33847097493     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2005.1606589     Document Type: Conference Paper

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