Low-pressure H2/N2 annealing on indium tin oxide film

Microelectronics Journal

Volumn 38, Issue 12, 2007, Pages 1220-1225

  Chang, Shang Chou ^a  

^a KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Annealing; H2 N2; Indium tin oxide

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; HYDROGEN; INDIUM COMPOUNDS; PRESSURE EFFECTS; TIN OXIDES;

ANNEALING PROCESS WINDOW; HYDROGEN REDUCTION; INDIUM TIN OXIDE (ITO) FILM; OXYGEN VACANCY;

THIN FILMS;

EID: 36348982194     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.022     Document Type: Article

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