Alternating phase-shift mask and binary mask for 45-nm node and beyond: The impact on the mask error control

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6607, Issue PART 1, 2007, Pages

  Kojima, G Yosuke ^a   Shirasaki, Masanori ^a   Chiba, Kazuaki ^a   Tanaka, Tsuyoshi ^a   Inazuki, Yukio ^b   Yoshikawa, Hiroki ^b   Okazaki, Satoshi ^b   Iwase, Kazuya ^c   Ishikawa, Kiichi ^c   Ozawa, Ken ^c  

^a TOPPAN PRINTING CO LTD   (Japan)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c Semiconductor Business Group   (Japan)

Author keywords

AIMS; Alternating phase shift mask; Binary mask; Immersion lithography; Resolution enhancement technologies

Indexed keywords

DENSITY (OPTICAL); IMAGING SYSTEMS; OPTICAL RESOLVING POWER; PHASE SHIFT; REFLECTION; SHEET RESISTANCE; ANTIREFLECTION COATINGS; BINARY SEQUENCES; ERROR CORRECTION; IMAGE ENHANCEMENT; IMAGE REGISTRATION;

ALTERNATING PHASE SHIFT MASKS; BINARY MASKS; IMMERSION LITHOGRAPHY; RESOLUTION ENHANCEMENT TECHNOLOGIES;

MASKS;

EID: 36249017273     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.728925     Document Type: Conference Paper

References (7)

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