Study of alternating phase-shift mask structures for ArF lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5446, Issue PART 2, 2004, Pages 570-577

  Kojima, Yosuke ^a   Konishi, Toshio ^a   Sasaki, Jun ^a   Tanaka, Keishi ^a   Komizo, Toru ^a   Morita, Motohiko ^a   Shirasaki, Masanori ^a   Ohshima, Takashi ^a   Takahashi, Hiroyuki ^a   Chiba, Kazuaki ^a   Otaki, Masao ^a   Okuda, Yoshimitsu ^a  

^a TOPPAN PRINTING CO LTD   (Japan)

Author keywords

3D mask simulation; AIMS; Alternating phase shift mask; ArF lithography

Indexed keywords

COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; LIGHT SCATTERING; LITHOGRAPHY; LOGIC GATES; OPTIMIZATION; PHASE SHIFT;

ARF LITHOGRAPHY; ELECTROMAGNETIC FIELD SIMULATION; MASK ERROR ENHANCEMENT FACTOR (MEEF); NORMALIZED IMAGE LOG-SLOPE (NILS);

MASKS;

EID: 19944428719     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557801     Document Type: Conference Paper

References (4)

1. Toshio Konishi, et al., "Study of alternating phase shift mask structure for 65nm node devices", Proc. of SPIE,Vol.5256, pp880-888 (2003)
2. Armen Kroyan and Hua-yu Liu, "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology", Proc. of SPIE, Vol.4889, pp1217-1226 (2002)
3. Kei Mesuda, et al., "Optimization of Alt-PSM structure for 100nm-node ArF lithography (part-2)", Proc. of SPIE, Vol.4754, pp396-409 (2002)
4. M. Burkhardt, R. Gordon, M. Hibbs, T. A. Brunner, "Through Pitch Correction of Scattering Effects in 193nm Alternating Phase Shift Masks", Proc. of SPIE, Vol.4691, pp348-358 (2002)