Conductivity modulation improvement in 6.5kV trench UMOS insulated gate bipolar transistors

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 121-124

  Natarajan, R ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Conductivity modulation; UMOS IGBT

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT LAYOUT; MOS DEVICES; SWITCHING;

CONDUCTIVITY MODULATION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036053273     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 6.5 kV-modules using IGBTs with field stop technology
2. Experimental study on plasma engineering in 6500 V IGBTS
3. 500-V n-channel insulated gate bipolar transistor with a trench gate structure
4. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
5. A design concept for the low forward voltage drop 4500 V trench IGBT
6. IEGT design concept against operational instability and its impact to application
7. 500 V, N-channel atomic lattice layout (ALL) IGBT's with superior latching immunity
8. Carrier injection enhancement effect of high voltage MOS devices - Device physics and design concept