Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2893-2897

  Lai, Chao Sung ^a   Wu, Woei Cherng ^b   Wang, Jer Chyi ^c   Chao, Tien Sheng ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NANYA TECHNOLOGY CORPORATION   (Taiwan)

Author keywords

Fluorine implantation; HfO2; Thermal stability

Indexed keywords

ANNEALING; DEPOSITION; FLUORINE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; THERMODYNAMIC STABILITY;

FLUORINE IMPLANTATION; GATE DIELECTRICS; HFO2; SILICON SURFACE FLUORINE IMPLANTATION (SSFI);

DIELECTRIC MATERIALS;

EID: 33646926162     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2893     Document Type: Article

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