Dislocation related PL of multi-step annealed Cz-Si samples

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 773-778

  Steinman, E A ^a   Tereshchenko, A N ^a   Vdovin, V I ^b   Misiuk, A ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Dislocations; Gettering; Impurities; PL; Silicon

Indexed keywords

DISLOCATIONS (CRYSTALS); IMPURITIES; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

AFTER HIGH TEMPERATURE; DEPLETION REGION; DISLOCATION LOOP; GETTERING; INFLUENCE OF OXYGEN; INTERSTITIAL OXYGEN; LOW-ENERGY BAND; TEM ANALYSIS;

SILICON COMPOUNDS;

EID: 36048990611     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.773     Document Type: Conference Paper

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