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Nanoscale Research Letters

Volumn 2, Issue 11, 2007, Pages 554-560

Electronic structure of a hydrogenic acceptor impurity in semiconductor nano-structures

(2) Li, Shu Shen a,b Xia, Jian Bai a,b

a CCAST WORLD LABORATORY (China)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINEMENT SIZE; HYDROGENIC ACCEPTORS; SEMICONDUCTOR NANOSTRUCTURES;

BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; IMPURITIES; PHOTOELECTRIC DEVICES; QUANTUM CONFINEMENT; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

NANOSTRUCTURES;

EID: 35948994496 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-007-9098-9 Document Type: Article

Times cited : (9)

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