Theoretical calculations of shallow impurity states in deformed quantum wires with an application to porous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 16, 2000, Pages 10914-10917

  Buonocore, F ^a   Ninno, D ^a   Iadonisi, G ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; SILICON;

ARTICLE; CALCULATION; DIELECTRIC CONSTANT; POROSITY; QUANTUM THEORY; TEMPERATURE;

EID: 0034667055     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.10914     Document Type: Article

References (9)