Strain state and thermal stability of strained-si-on-insulator substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7294-7296

  Hoshi, Yusuke ^a   Fukumoto, Atsushi ^a   Sawano, Kentarou ^a   Cayrefourcq, Ian ^b   Yoshimi, Makoto ^c   Shiraki, Yasuhiro ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c SOITEC Asia   (Japan)

Author keywords

Silicon germanium; SOI; sSOI; Strain relaxation; Strained Si; Thermal stability

Indexed keywords

ANNEALING; RAMAN SPECTROSCOPY; STRAIN RELAXATION; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

CRYSTAL QUALITY; RECIPROCAL SPACE MAPPING; STRAIN REDUCTION; STRAINED-SI-ON-INSULATOR (SSOI) SUBSTRATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 35948978530     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7294     Document Type: Article

References (12)

1. L.-J. Huang, J. O. Chu, S. Goma, C. P. D'Emic, S. J. Koester, D. F. Canaperi, P. M. Mooney, S. A. Cordes, J. L. Speidell, R. M. Anderson, and H.-S. P. Wong: IEEE Symp. VLSI Circuits Dig. Tech. Pap., Kyoto, Japan, 2001, p. 57.
2. Z.-Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadas: IEEE Electron Device Lett. 22 (2001) 321.
3. S. J. Koester, K. Rim, J. O. Chu, P. M. Mooney, and J. A. Ott: Appl. Phys. Lett. 79 (2001) 2148.
4. K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong: IEDM Tech. Dig., 2003, p. 49.
5. T. A. Langdo, M. T. Currie, Z.-Y. Cheng, J. G. Fiorenza, M. Erdtmann, G. Braithwaite, C. W. Leitz, C. J. Vineis, J. A. Carlin, A. Lochtefeld, M. T. Bulsara, I. Lauer, D. A. Antoniadis, and M. Somerville: Solid-State Electron. 48 (2004) 1357.
6. C. W. Leitz, M. T. Currie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald: J. Appl. Phys. 92 (2002) 3745.
7. D. J. Lockwood and J.-M. Baribeau: Phys. Rev. B 45 (1992) 8565.
8. J. C. Tsang, P. M. Mooney, F. Dacol, and J. O. Chu: J. Appl. Phys. 75 (1994) 8098.
9. E. Anastassakis, A. Cantarero, and M. Cardona: Phys. Rev. B 41 (1990) 7529.
10. A. Fukumoto, K. Sawano, Y. Hoshi, M. Yoshimi, and Y. Shiraki: Ext. Abstr. 3rd Int. SiGe Technology and Device Meet. (ISTDM2006), p. 284.
11. I. Cayrefourcq, M. Kennard, F. Metral, C. Mazuré, A. Thean, M. Sadaka, T. White, and B. Y. Nguyen: Proc. Electrochem. Soc. 2005-03 (2005) 191.
12. H. J. McSkimin and P. Andreatch, Jr.: J. Appl. Phys. 35 (1964) 2161.