Fourfold increase of the ultraviolet (314 nm) electroluminescence from SiO2: Gd layers by fluorine coimplantation and flash lamp annealing

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Prucnal, S ^a,b   Sun, J M ^a,c   Rebohle, L ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

^c NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; ELECTRON SCATTERING; GADOLINIUM; HOT ELECTRONS; ULTRAVIOLET RADIATION;

FLASH LAMP ANNEALING; FLUORINE COIMPLANTATION; HOT ELECTRON SCATTERING; ULTRAVIOLET ELECTROLUMINESCENCE;

MOS DEVICES;

EID: 35649008349     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2803855     Document Type: Article

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