Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

IEE Proceedings: Optoelectronics

Volumn 148, Issue 5-6, 2001, Pages 215-218

  Ng, H M ^a   Gmachl, C ^a   Frolov, S V ^a   Chu, S N G ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT ABSORPTION; LIGHT MEASUREMENT; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL PUMPING; OPTOELECTRONIC DEVICES; PROBES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

COMMUNICATION WAVELENGTHS; LONGITUDINAL OPTICAL PHONONS; OPTICAL TRANSITIONS; SUB-PICOSECOND INTERSUB-BAND; SUPERLATTICE BARRIERS; TIME RESOLVED PUMP AND PROBE TECHNIQUE;

ELECTRON SCATTERING;

EID: 0035481404     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010752     Document Type: Article

References (13)

1. Observation of intersubband absorption in MOCVD grown AlGaN/GaN MQW's
2. Ultrafast intersubband relaxation (∼150 fs) in AlGaN/GaN multiple quantum wells
3. Near infrared intersubband transitions in InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
4. Nonlinearity and recovery time of 1.55 μm intersub-band absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
5. Picosecond all-optical switching using 1.55 μm intersubband transition in an InGaAs/AlAs/AlAsSb coupled double quantum well (C-DQW) structure
6. 0.7As/Als quantum wells
7. Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices
8. Intersub-band absorption at λ ∼ 1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
9. Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures
10. High dislocation densities in high efficiency GaN-based light-emitting diodes
11. 1-xN superlattices for 1.52 -4.2 μm intersub-band transitions
12. In-situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells
13. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells