Deformation potentials of Si-doped GaAs from microscopic residual stress fields

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Porporati, Alessandro Alan ^a   Furukawa, Naohide ^b   Zhu, Wenliang ^b   Pezzotti, Giuseppe ^b  

^a CNR Kyoto Research Center   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEFORMATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON;

DEFORMATION POTENTIALS; ENERGY SOURCE; MICROSCOPIC RESIDUAL STRESS FIELDS; RESIDUAL STRAIN FIELDS;

RESIDUAL STRESSES;

EID: 35648929313     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2798603     Document Type: Article

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