Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

Surface Science

Volumn 601, Issue 21, 2007, Pages 4881-4887

  Stavale, F ^a,b   Achete, C A ^a,b   Niehus, H ^a,c  

^a INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

^b FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^c HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Metal semiconductor interface; Nanostructures; Scanning tunneling microscopy; Silicide; Silicon; Surface chemical reaction; Surface diffusion; Vanadium

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; NANOCLUSTERS; SCANNING TUNNELING MICROSCOPY; SILICIDES; SILICON; VANADIUM COMPOUNDS;

METAL-SEMICONDUCTOR INTERFACE; PHASE EPITAXY; SOLID PHASE EPITAXY; STRONG METAL-SILICON REACTION; VANADIUM SILICIDE CLUSTERS;

VANADIUM;

EID: 35548956035     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.08.014     Document Type: Article

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