Morphology of ultrathin manganese silicide on Si(111)

Surface Science

Volumn 419, Issue 2-3, 1999, Pages 134-143

  Nagao, Tadaaki ^a,b   Ohuchi, Satoru ^a   Matsuoka, Yasuyuki ^a   Hasegawa, Shuji ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Epitaxial growth; Manganese; Morphology; RHEED; Silicon; STM

Indexed keywords

ANNEALING; DIFFUSION; EPITAXIAL GROWTH; MANGANESE COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACES;

DIMER ADATOM STACKING FAULT; MANGANESE SILICIDE;

MORPHOLOGY;

EID: 0033521416     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00771-7     Document Type: Article

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