메뉴 건너뛰기




Volumn 43, Issue 22, 2007, Pages 1192-1194

Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; PLATINUM COMPOUNDS; VOLTAGE MEASUREMENT;

EID: 35448952088     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072041     Document Type: Article
Times cited : (3)

References (9)
  • 1
    • 25444494950 scopus 로고    scopus 로고
    • Hydrogen and hydrocarbon gas sensing performance of Pt/WO3/SiC MROSiC devices
    • 10.1016/j.snb.2005.06.066
    • Kandasamy, S., Trinchi, A., Wlodarski, W., Comini, E., and Sberveglieri, G.: ' Hydrogen and hydrocarbon gas sensing performance of Pt/WO3/SiC MROSiC devices ', Sens. Actuators B, 2005, 111, p. 111-116 10.1016/j.snb.2005.06.066
    • (2005) Sens. Actuators B , vol.111 , pp. 111-116
    • Kandasamy, S.1    Trinchi, A.2    Wlodarski, W.3    Comini, E.4    Sberveglieri, G.5
  • 2
    • 24144452804 scopus 로고    scopus 로고
    • AlGaN/GaN Schottky diode hydrogen sensor performance at high temperature with different catalytic metals
    • 0038-1101
    • Song, J., Lu, W., Flynn, J.S., and Brandes, G.R.: ' AlGaN/GaN Schottky diode hydrogen sensor performance at high temperature with different catalytic metals ', Solid-State Electron., 2005, 49, p. 1330-1334 0038-1101
    • (2005) Solid-State Electron. , vol.49 , pp. 1330-1334
    • Song, J.1    Lu, W.2    Flynn, J.S.3    Brandes, G.R.4
  • 3
    • 0034141006 scopus 로고    scopus 로고
    • AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
    • 10.1109/55.821668 0741-3106
    • Khan, M.A., Hu, X., Sumin, G., Lunev, A., Yang, J., Gaska, R., and Shur, M.S.: ' AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor ', IEEE Electron Device Lett., 2000, 21, p. 63-65 10.1109/55.821668 0741-3106
    • (2000) IEEE Electron Device Lett. , vol.21 , pp. 63-65
    • Khan, M.A.1    Hu, X.2    Sumin, G.3    Lunev, A.4    Yang, J.5    Gaska, R.6    Shur, M.S.7
  • 4
    • 49149135059 scopus 로고
    • Hydrogen sensitive MOS structures. Part 1. Principles and applications
    • 0250-6874
    • Lundström, I.: ' Hydrogen sensitive MOS structures. Part 1. Principles and applications ', Sens. Actuators, 1981, 1, p. 403-426 0250-6874
    • (1981) Sens. Actuators , vol.1 , pp. 403-426
    • Lundström, I.1
  • 5
    • 0019698094 scopus 로고
    • Hydrogen sensitive MOS structures. Part 2. Characterization
    • 0250-6874
    • Lundström, I.: ' Hydrogen sensitive MOS structures. Part 2. Characterization ', Sens. Actuators, 1981/1982, 2, p. 105-138 0250-6874
    • (1981) Sens. Actuators , vol.2 , pp. 105-138
    • Lundström, I.1
  • 6
    • 23044473295 scopus 로고    scopus 로고
    • Hydrogen interaction with platinum and palladium metal-insulator- semiconductor devices
    • paper 014505 0021-8979
    • Salomonsson, A., Eriksson, M., and Dannetun, H.: ' Hydrogen interaction with platinum and palladium metal-insulator-semiconductor devices ', J. Appl. Phys., 2005, 98, paper 014505 0021-8979
    • (2005) J. Appl. Phys. , vol.98
    • Salomonsson, A.1    Eriksson, M.2    Dannetun, H.3
  • 7
    • 0345866741 scopus 로고    scopus 로고
    • Evaluation of the perfection of the Pd-InP Schottky interface from the energy viewpoint of hydrogen adsorbates
    • 10.1088/0268-1242/19/1/006 0268-1242
    • Chen, H.I., and Chou, Y.I.: ' Evaluation of the perfection of the Pd-InP Schottky interface from the energy viewpoint of hydrogen adsorbates ', Semicond. Sci. Technol., 2004, 19, p. 39-44 10.1088/0268-1242/19/1/006 0268-1242
    • (2004) Semicond. Sci. Technol. , vol.19 , pp. 39-44
    • Chen, H.I.1    Chou, Y.I.2
  • 9
    • 0242489213 scopus 로고    scopus 로고
    • The response of palladium metal-insulator-semiconductor devices to hydrogen-oxygen mixtures: Comparisons between kinetic models and experiment
    • 10.1016/S0925-4005(03)00545-8
    • Medlin, J.W., Lutz, A.E., Bastasz, R., and McDaniel, A.H.: ' The response of palladium metal-insulator-semiconductor devices to hydrogen-oxygen mixtures: comparisons between kinetic models and experiment ', Sens. Actuators B, 2003, 96, p. 290-297 10.1016/S0925-4005(03)00545-8
    • (2003) Sens. Actuators B , vol.96 , pp. 290-297
    • Medlin, J.W.1    Lutz, A.E.2    Bastasz, R.3    McDaniel, A.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.