The adsorption and growth of copper on as-terminated GaAs(001): Physical vapour versus electrochemical deposition

Zeitschrift fur Physikalische Chemie

Volumn 221, Issue 9-10, 2007, Pages 1273-1286

  Zegenhagen, J ^a   Lee, T L ^a   Grunder Y ^a   Renner, F U ^a   Fimland, B O ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Copper; Electrochemical deposition; GaAs; Vapour deposition

Indexed keywords

COPPER; COPPER METALLOGRAPHY; ELECTRODES; ELECTROLYTES; FLUORESCENCE SPECTROSCOPY; GALLIUM ARSENIDE; HEAVY IONS; III-V SEMICONDUCTORS; REDUCTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; ULTRAHIGH VACUUM; VAPOR DEPOSITION;

AQUEOUS ELECTROLYTE; GAAS; INTERFACE REGIONS; POTENTIAL CONTROL; SUBMONOLAYER COVERAGE; VAPOUR DEPOSITION; X RAY FLUORESCENCE SPECTROSCOPY; X-RAY STANDING WAVES;

ELECTROCHEMICAL DEPOSITION;

EID: 35448951283     PISSN: 09429352     EISSN: None     Source Type: Journal    
DOI: 10.1524/zpch.2007.221.9-10.1273     Document Type: Article

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