SCOPUS 정보 검색 플랫폼

Volumn 121-122, Issue , 1997, Pages 102-106

Structural study of electrochemically deposited copper on p-GaAs(001) by atomic force microscopy and surface X-ray absorption fine structure measurement

(5) Uosaki, Kohei a Kondo, Toshihiro a Koinuma, Michio a,c Tamura, Kazuhisa a Oyanagi, Hiroyuki b

a HOKKAIDO UNIVERSITY (Japan)

b ELECTROTECHNICAL LABORATORY (Japan)

c KUMAMOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; ELECTRODEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SOLUTIONS; SURFACE STRUCTURE;

X RAY ABSORPTION FINE STRUCTURE;

COPPER PLATING;

EID: 18544399932 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00265-1 Document Type: Article

Times cited : (7)

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