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Volumn 5366, Issue , 2004, Pages 149-157

Materials and structural design of a mid-infrared light emitting device

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INFRARED RADIATION; LIGHT EMISSION; PHOTOLUMINESCENCE; PRODUCT DESIGN; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS;

EID: 3543145391     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528899     Document Type: Conference Paper
Times cited : (3)

References (14)
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    • InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μm
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  • 10
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    • H. P. Hjalmarson and S. R. Kurtz "Electron Auger processes in mid-infrared InAsSb/InGaAs heterostructures", Appl. Phys. Lett. 69, 949-951, 1996.
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    • Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode
    • A. A. Erchak, Daniel J. Ripin, Shanhui Fan, Peter Rakich, John D. Joannopoulos, Erich P. Ippen, Gale S. Petrich, and Leslie A. Kolodziejski "Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode, Appl. Phys. Lett. 78, 563-565, 2001.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.