Laser diode structure for the generation of high-power picosecond optical pulses

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4483-4485

  Vainshtein, Sergey ^a   Kostamovaara, Juha ^a   Shestak, Larisa ^b   Sverdlov, Mikhail ^b   Tretyakov, Vladimir ^c  

^a UNIVERSITY OF OULU   (Finland)

^b Inject Enterprise   (Russian Federation)

^c CAMECA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BAND GAP ENGINEERING; CURRENT AMPLITUDE; CURRENT PULSE; DIRECT CURRENT; ELECTRON INJECTORS; EMISSION WAVELENGTH; HIGH-POWER; LASER DIODE STRUCTURES; P-N JUNCTION; PICOSECONDS; POTENTIAL BARRIERS; TRANSVERSE ELECTRIC FIELD;

ELECTRIC FIELDS; SEMICONDUCTOR JUNCTIONS;

OPTICAL PUMPING;

EID: 79955990468     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486478     Document Type: Article

References (5)

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2. A. Biernat and G. Kompa, J. Opt. 29, 225 (1998). joq JOOPDB 0150-536X
3. S. N. Vainshtein and J. T. Kostamovaara, J. Appl. Phys. 84, 1843 (1998). jap JAPIAU 0021-8979
4. E. L. Portnoi, G. B. Venus, A. A. Khazan, I. M. Gadjiev, A. Yu. Shmarcev, J. Frahm, and D. Kuhl, IEEE J. Sel. Top. Quantum Electron. 3, 256 (1997). isq IJSQEN 1077-260X
5. G. Venus, A. Gubenko, V. Dashevskii, E. Portnoi, E. Avrutin, J. Frahm, J. Kubler, S. Schelhase, and A. Paraskevopoulos, 17th International Semiconductor Laser Conference (IEEE, New York, 2000), p. 145.