메뉴 건너뛰기




Volumn 3, Issue 2, 1997, Pages 256-260

Superhigh-power picosecond optical pulses from Q-switched diode laser

Author keywords

Light pulse generation; Picosecond optical pulses; Q switched lasers; Q switching; Semiconductor lasers

Indexed keywords

HIGH POWER LASERS; ION IMPLANTATION; LASER MODES; LASER RESONATORS; LIGHT PULSE GENERATORS; Q SWITCHED LASERS; Q SWITCHING;

EID: 0031108453     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605666     Document Type: Article
Times cited : (30)

References (10)
  • 1
    • 0030128366 scopus 로고    scopus 로고
    • High-peak-power picosecond optical pulse generation from Q-switched bow-tie laser with a traveling wave amplifier
    • Apr.
    • B. Zhu, I. H. White, K. A. Williams, F. R. Laughton, and R. V. Penty, "High-peak-power picosecond optical pulse generation from Q-switched bow-tie laser with a traveling wave amplifier," IEEE Photon. Technol. Lett., vol. 8, pp. 503-505, Apr. 1996.
    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 503-505
    • Zhu, B.1    White, I.H.2    Williams, K.A.3    Laughton, F.R.4    Penty, R.V.5
  • 2
    • 0030378287 scopus 로고    scopus 로고
    • High power picosecond pulse generation from a two-section InGaAsP/InP MQW complex-coupled DFB laser diode
    • Haifa, Israel
    • Z. Jiang, H. K. Tsang, W. Wang, Z. Wang, X. Wang, and Q. Wang, "High power picosecond pulse generation from a two-section InGaAsP/InP MQW complex-coupled DFB laser diode" in Proc. 15th Int. Semiconductor Laser Conf., Haifa, Israel, 1996, pp. 159-160.
    • (1996) Proc. 15th Int. Semiconductor Laser Conf. , pp. 159-160
    • Jiang, Z.1    Tsang, H.K.2    Wang, W.3    Wang, Z.4    Wang, X.5    Wang, Q.6
  • 4
    • 0001232779 scopus 로고
    • Internal Q-switching in semiconductor lasers: High intensity pulses in the picosecond range and spectral peculiarities
    • June
    • S. Vainshtein, V. Rossin, A. Kilpela, J. Kostamovaara, R. Myllyla, and K. Maatta, "Internal Q-switching in semiconductor lasers: high intensity pulses in the picosecond range and spectral peculiarities,"IEEE J. Quantum Electron., vol. 31, pp. 1015-1021, June 1995.
    • (1995) IEEE J. Quantum Electron. , vol.31 , pp. 1015-1021
    • Vainshtein, S.1    Rossin, V.2    Kilpela, A.3    Kostamovaara, J.4    Myllyla, R.5    Maatta, K.6
  • 5
    • 0012088933 scopus 로고
    • Characteristics of heterostructure lasers with saturable absorber fabricated by deep ions implantation
    • June
    • E. Portnoi, N. Stelmakh, and A. Chelnokov, "Characteristics of heterostructure lasers with saturable absorber fabricated by deep ions implantation," Soviet Tech. Phys. Lett., vol. 15, no. 6, pp. 432-433, June 1989.
    • (1989) Soviet Tech. Phys. Lett. , vol.15 , Issue.6 , pp. 432-433
    • Portnoi, E.1    Stelmakh, N.2    Chelnokov, A.3
  • 7
    • 0012273384 scopus 로고
    • Estimation of lifetimes of nonequilibrium carriers in semiconductors irradiated with heave ions
    • Aug.
    • E. Avrutin and M. Portnoi, "Estimation of lifetimes of nonequilibrium carriers in semiconductors irradiated with heave ions," Sov. Phys.-Semicond. vol. 22, no. 8, pp. 968-970, Aug. 1988.
    • (1988) Sov. Phys.-Semicond. , vol.22 , Issue.8 , pp. 968-970
    • Avrutin, E.1    Portnoi, M.2
  • 8
    • 0012668560 scopus 로고
    • Planar leaky light-guides and couplers
    • R. Ulrich and W. Prettl, "Planar leaky light-guides and couplers," I on Appl. Phys., vol. 1, no. 1, pp. 55-68, 1973.
    • (1973) I on Appl. Phys. , vol.1 , Issue.1 , pp. 55-68
    • Ulrich, R.1    Prettl, W.2
  • 9
    • 84897494945 scopus 로고
    • Threshold charecteristics of an injection laser with one ligthly doped heterojunction
    • Nov.
    • B. Gelmont, V. Elukhin, G. Zegria, E. Portnoi, and M. Ebunaidze, "Threshold charecteristics of an injection laser with one ligthly doped heterojunction," Sov. Phys. - Semicond., vol. 20, no. 11, pp. 1289-1291, Nov. 1986.
    • (1986) Sov. Phys. - Semicond. , vol.20 , Issue.11 , pp. 1289-1291
    • Gelmont, B.1    Elukhin, V.2    Zegria, G.3    Portnoi, E.4    Ebunaidze, M.5
  • 10
    • 0003274533 scopus 로고
    • Forming of high-voltage nanosecond and subnanosecond pulses using standard power rectifying diodes
    • V. Belkin and G. Shulzchenko "Forming of high-voltage nanosecond and subnanosecond pulses using standard power rectifying diodes," Rev. Sci. Instrum, vol. 65, no. 3, pp. 751-753, 1994.
    • (1994) Rev. Sci. Instrum , vol.65 , Issue.3 , pp. 751-753
    • Belkin, V.1    Shulzchenko, G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.