-
1
-
-
0029370272
-
3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
-
3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application, Jpn. J. Appl. Phys., Part 1, 1995, vol. 34, no. 9, pp. 5178-5183.
-
(1995)
Jpn. J. Appl. Phys., Part 1
, vol.34
, Issue.9
, pp. 5178-5183
-
-
Hwang, C.S.1
Park, S.O.2
Rang, C.S.3
-
2
-
-
0029369254
-
3 Thin Films
-
3 Thin Films, Jpn. J. Appl. Phys., Part 1, 1995, vol. 34, no. 9, pp. 5198-5201.
-
(1995)
Jpn. J. Appl. Phys., Part 1
, vol.34
, Issue.9
, pp. 5198-5201
-
-
Ichinose, N.1
Ogiwara, Y.T.2
-
3
-
-
0026224812
-
3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties
-
3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties, Jpn. J. Appl. Phys., Part 1, 1991, vol. 30, no. 9, pp. 2193-2196.
-
(1991)
Jpn. J. Appl. Phys., Part 1
, vol.30
, Issue.9
, pp. 2193-2196
-
-
Yamamishi, S.1
Sakuma, T.2
Takemura, K.3
Miyasaka, Y.4
-
4
-
-
0031221133
-
2 Films Prepared by Metal-Organic Chemical Vapour Deposition
-
2 Films Prepared by Metal-Organic Chemical Vapour Deposition, Jpn. J. Appl. Phys., Part 1, 1997, vol. 36, no. 9, pp. 5820-5824.
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, Issue.9
, pp. 5820-5824
-
-
Ando, F.1
Shimizu, H.2
Kobayashi, I.3
Okada, M.4
-
5
-
-
0030234306
-
3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition MOCVD
-
3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition MOCVD, Jpn. J. Appl. Phys., Part 1, 1996, vol. 35, no. 9, pp. 4890-4895.
-
(1996)
Jpn. J. Appl. Phys., Part 1
, vol.35
, Issue.9
, pp. 4890-4895
-
-
Kang, Ch.S.1
Hwang, C.S.2
Cho, H.J.3
-
6
-
-
0034155939
-
3 Thin Films by Plasma Enhanced Metalorganic Chemical Vapor Deposition
-
3 Thin Films by Plasma Enhanced Metalorganic Chemical Vapor Deposition, J. Vac. Sci. Technol., A, 2000, vol. 18, no. 2, pp. 361-366.
-
(2000)
J. Vac. Sci. Technol., A
, vol.18
, Issue.2
, pp. 361-366
-
-
Kim, D.O.1
Choi, R.J.2
Nahm, K.S.3
Hahn, Y.B.4
-
7
-
-
0036747806
-
4
-
4, J. Vac. Sci. Technol., A, 2002, vol. 20, no. 5, pp. 1828-1830.
-
(2002)
J. Vac. Sci. Technol., A
, vol.20
, Issue.5
, pp. 1828-1830
-
-
Lee, J.H.1
Cho, Y.J.2
Min, Y.S.3
Kim, D.4
-
8
-
-
0030682310
-
On Thermodynamic Equilibria of Solid BN and Gas Phases in the B-N-H-Cl-He System
-
Golubenko, A.N., Kosinova, M.L., Titov, V.A., et al., On Thermodynamic Equilibria of Solid BN and Gas Phases in the B-N-H-Cl-He System, Thin Solid Films, 1997, vol. 293, pp. 11-16.
-
(1997)
Thin Solid Films
, vol.293
, pp. 11-16
-
-
Golubenko, A.N.1
Kosinova, M.L.2
Titov, V.A.3
-
9
-
-
3543143035
-
3
-
3, Proc. Int. Symp. Chemical Vapor Deposition XVI and EUROCVD 14, 2003, vol. 2003-08, no. 2086, pp. 243-248.
-
(2003)
Proc. Int. Symp. Chemical Vapor Deposition XVI and EUROCVD 14
, vol.8
, Issue.2086
, pp. 243-248
-
-
Salinas, E.R.1
Pisch, A.2
Chatillon, C.3
Bernard, C.4
-
10
-
-
0001548543
-
Symmetry Breaking in Nitrogen Doped Amorphous Carbon: Infrared Observation of the Raman-Active G and D Bands
-
Kaufman, H. and Metin, S., Symmetry Breaking in Nitrogen Doped Amorphous Carbon: Infrared Observation of the Raman-Active G and D Bands, Phys. Rev. B: Condens. Matter, 1989, vol. 39, no. 18, pp. 13053-13060.
-
(1989)
Phys. Rev. B: Condens. Matter
, vol.39
, Issue.18
, pp. 13053-13060
-
-
Kaufman, H.1
Metin, S.2
-
11
-
-
0033097419
-
2
-
2, J. Electrochem. Soc., 1999, vol. 146, no. 3, pp. 1117-1121.
-
(1999)
J. Electrochem. Soc.
, vol.146
, Issue.3
, pp. 1117-1121
-
-
Ryu, H.-K.1
Shik, H.2
Sung, C.3
Sang, H.M.4
-
12
-
-
0033886811
-
2
-
2, J. Electrochem. Soc., 2000, vol. 147, no. 3, pp. 1130-1135.
-
(2000)
J. Electrochem. Soc.
, vol.147
, Issue.3
, pp. 1130-1135
-
-
Ryu, H.-K.1
Shik, H.J.2
Sung, C.3
-
13
-
-
0001412468
-
Optical Properties and Microstructure of CVD Diamond Films
-
Lin, Z., Akkerman, Z., Yang, B.X., and Smith, F.W., Optical Properties and Microstructure of CVD Diamond Films, Diamond Relat. Mater., 1997, vol. 6, pp. 153-158.
-
(1997)
Diamond Relat. Mater.
, vol.6
, pp. 153-158
-
-
Lin, Z.1
Akkerman, Z.2
Yang, B.X.3
Smith, F.W.4
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