Atomistic impurity diffusion simulation of shallow junction fabrication processes and dopant-induced intrinsic fluctuations

Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Volumn , Issue , 2002, Pages 75-80

  Hane, M ^a   Ikezawa, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3543080718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2002.1225209     Document Type: Conference Paper

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