A fast monte carlo ion implantation simulation based on statistical enhancement technique and parallel computation

NEC Research and Development

Volumn 37, Issue 2, 1996, Pages 170-177

  Hane, Masami ^a   Ikezawa, Takeo ^b   Matsumoto, Hiroshi ^a  

^a Microlectron Research Laboratories

^b NEC CORPORATION   (Japan)

Author keywords

Ion implantation; Monte carlo; Parallel computation; Simulation; Statistical enhancement; TCAD (technological CAD); Trajectory multiplication; Trajectory splitting

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MONTE CARLO METHODS; PARALLEL ALGORITHMS; PARALLEL PROCESSING SYSTEMS;

STATISTICAL ENHANCEMENT TECHNIQUE; TRAJECTORY MULTIPLICATION; TRAJECTORY SPLITTING;

ION IMPLANTATION;

EID: 5244245764     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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8. 2 Implants in Silicon," J. Electrochem. Soc., 136, 3, pp. 810-814, 1989.
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