The memory effect of a pentacene field effect transistor with a polarizable gate dielectric

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5351, Issue , 2004, Pages 166-172

  Unni, K N Narayanan ^a   De Bettignies, Remi ^a   Dabos Seignon, Sylvie ^a   Nunzi, Jean Michel ^a  

^a UNIVERSITÉ D'ANGERS   (France)

Author keywords

Field effect transistor; Non volatile memory; Organic semiconductor

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC INSULATORS; ENERGY GAP; NONVOLATILE STORAGE; RESONANT CIRCUITS; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

FERROELECTRIC MEMORY; GATE INSULATOR POLARIZATION; NONVOLATILE TRANSISTOR MEMORY; ORGANIC ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 3543061146     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.530655     Document Type: Conference Paper

References (19)

1. J.C. Crafford, and F.L. English, IEEE, Trans. Electron Devices, ED-16, 525, 1969.
2. S-Y. Wu, IEEE, Trans. Electron Devices, 21, 499, 1974. Ferroelectrics, 11, 379, 1976.
3. S-Y. Wu, IEEE, Trans. Electron Devices, 21, 499, 1974. Ferroelectrics, 11, 379, 1976.
4. Y. Hiyuma, Y. Matsui, M. Okuyama, T. Nakagawa, and Y. Hamakawa, Jap. J. Appl. Phys., 17, 209, 1977.
5. C.H. Seager, D. McIntyre, B.A. Tuttle, and J. Evans, Integrated Ferroelectrics, 6, 47, 1995.
6. Y. Watanabe, Appl. Phys. Lett., 66, 1770, 1995.
7. M.W.J. Prins, K-O. Grosse-Holz, G. Muller, J.F.M. Cillessen, J.B. Giesbers, R.P. Weening and R.M. Wolf, Appl. Phys. Lett., 68, 3650, 1996.
8. C.H. Seager, D.C. Mcintyre, W.L. Warren, and B.A. Tuttle, Appl. Phys. Lett., 68, 2660, 1996.
9. C.D. Dimitrakopoulos, and P.R.L. Malenfant, Adv. Mater., 14, 99, 2002.
10. H.E. Katz, J. Mater. Chem., 7, 369, 1997.
11. G. Velu, C. Legrand, O. Tharaud, A. Chapoton, D. Remiens, and G. Horowotz, Appl. Phys. Lett., 79, 659, 2001.
12. H.E. Katz, X.M. Hong, A. Dodabalapur, and R. Sarpeshkar, J. Appl. Phys., 91, 1572, 2002.
13. M. Mushrush, A. Facchetti, M. Lefenfeld, H.E. Katz, and T.J. Marks, J. Am. Chem. Soc., 125, 9414, 2003.
14. T. Kodzasa, M. Yoshida, S. Uemura, and T. Kamata, Synth. Met., 137,943,2003
15. A.J. Lovinger, Science, 220, 1115, 1983.
16. Q.M. Zhang, V. Bharti, and X. Zhao, Science, 280, 2101, 1998.
17. N. Yamauchi, Jap. J. Appl. Phys., 25, 590, 1986.
18. M. Yoshida, S. Uemura, T. Kodzasa, T. Kamata, M. Matsuzava, and T. Kawai, Synth. Met., 137, 967, 2003.
19. T. Furukawa, H. Matsuzaki, M. Shiina, and Y. Tajitsu, Jap. J. Appl. Phys., 24, L661, 1985.