Tuning the shape of macroporous silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 10, 2007, Pages 3237-3242

  Trifonov, T ^a   Garin M ^a   Rodriguez A ^a   Marsal, L F ^b   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCULAR CROSS SECTION; MACROPOROUS SILICON; OXIDE-STRIPPING CYCLES; PHOTO-ELECTROCHEMICAL ETCHING; PORE WIDENING;

ANISOTROPY; ELECTROCHEMICAL ETCHING; OXIDATION; PORE SIZE; TUNING;

SILICON;

EID: 35349031775     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622537     Document Type: Review

References (27)

1. V. Lehmann, R. Stengl, H. Reisinger, R. Detemple, and W. Theiss, Appl. Phys. Lett. 78, 589 (2001).
2. C. A. Betty, R. Lal, D. K. Sharma, J. V. Yakhmi, and J. P. Mittal, Sens. Actuators B 97, 334 (2004).
3. R. Angelucci, A. Poggi, L. Dori, A. Tagliani, G. C. Cardinali, F. Corticelli, and M. Marisaldi, J. Porous Mater. 7, 197 (2000).
4. S. Matthias and F. Müller, Nature 424, 53 (2003).
5. S. E. Létant, B. R. Hart, A. W. van Buuren, and L. J. Terminello, Nature Mater. 2, 391 (2003).
6. S. W. Leonard, H. M. van Driel, K. Busch, S. John, A. Birner, A.-P. Li, F. Müller, U. Gösele, and V. Lehmann, Appl. Phys. Lett. 75, 3063 (1999).
7. S. W. Leonard, H. M. van Driel, J. Schilling, and R. B. Wehrspohn, Phys. Rev. B 66, 161102 (2002).
8. J. Schilling, R. B. Wehrspohn, A. Birner, F. Müller, R. Hillebrand, U. Gösele, S. W. Leonard, J. P. Mondia, F. Genereux, H. M. van Driel, P. Kramper, V. Sandoghdar, and K. Busch, J. Opt. A, Pure Appl. Opt. 3, S121 (2001).
9. S. Matthias, F. Müller, C. Jamois, R. B. Wehrs̀pohn, and U. Gösele, Adv. Mater. 16, 2166 (2004).
10. S. Matthias, F. Müller, and U. Gösele, J. Appl. Phys. 98, 023524 (2005).
11. R. Hillebrand, S. Senz, W. Hergert, and U. Gösele, J. Appl. Phys. 94, 2758 (2003).
12. E. Yablonovitch, Phys. Rev. Lett. 58, 2059 (1987).
13. S. John, Phys. Rev. Lett. 58, 2486 (1987).
14. A. Chutinan, S. John, and O. Toader, Phys. Rev. Lett. 90, 123901 (2003).
15. S. Ogawa, M. Imada, S. Yoshimoto, M. Okano, and S. Noda, Science 305, 227 (2004).
16. V. Lehmann and H. Föll, J. Electrochem. Soc. 137, 653 (1990).
17. V. Lehmann, J. Electrochem. Soc. 140, 2836 (1993).
18. J. Schilling, A. Birner, F. Müller, R. B. Wehrspohn, R. Hillebrand, U. Gösele, K. Busch, S. John, S. W. Leonard, and H. M. van Driel, Opt. Mater. 17, 7 (2001).
19. P. Kleimann, J. Linnros, and S. Petersson, Mater. Sci. Eng. B 69/70, 29 (2000).
20. V. Lehmann, Electrochemistry of Silicon (Wiley-VCH, Weinheim, 2002).
21. T. Trifonov, L. F. Marsal, A. Rodríguez, J. Pallarès, and R. Alcubilla, Phys. Rev. B 69, 235112 (2004).
22. S. Matthias, F. Müller, and U. M. Gösele, Proc. SPIE 5733, 1 (2005).
23. T. Trifonov, A. Rodríguez, F. Servera, L. F. Marsal, J. Pallarès, and R. Alcubilla, phys. stat. sol. (a) 202, 1634 (2005).
24. G. Barillaro and F. Pieri, J. Appl. Phys. 97, 116105 (2005).
25. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
26. D.-B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices 34, 1008 (1987).
27. D.-B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices 35, 25 (1988).