High-power 660-nm GaInP-AlGaInP laser diodes with low vertical beam divergence angles

IEEE Photonics Technology Letters

Volumn 17, Issue 7, 2005, Pages 1375-1377

  Ma, Byungjin ^a   Cho, Soohaeng ^b   Lee, Changyoun ^a   Kim, Youngmin ^a   Park, Yongjo ^b  

^a Samsung Electro Mechanics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

AlGaInP; Digital versatile disc (DVD); GaInP; Inductively coupled plasma reactive ion etcher (ICP RIE); Laser diode (LD)

Indexed keywords

DRY ETCHING; INDUCTIVELY COUPLED PLASMA; OPTIMIZATION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DIGITAL VERSATILE DISC (DVD); INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHER;

SEMICONDUCTOR LASERS;

EID: 23844459589     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.849977     Document Type: Article

References (8)

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