Mass-production of high-voltage GaAs and GaN devices

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 183-186

  Mitani, Eizo ^a   Haematsu, Hitoshi ^a   Yokogawa, Shigeru ^a   Nikaido, Junichiro ^a   Tateno, Yasunori ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

GaN HEMT; High voltage GaAs FET; Mass production

Indexed keywords

DEVICE PERFORMANCE; GAAS-FET; GAN HEMTS; HIGH VOLTAGE; HIGH-VOLTAGES; MASS PRODUCTION; PROCESS LINE; WAVE PRODUCTS;

GALLIUM ARSENIDE; GALLIUM NITRIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

SEMICONDUCTING GALLIUM;

EID: 84887485545     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Haematsu, et al., Development of L-band 28V Operation GaAs FET and optimization for Mass Production, 2005 CS MANTECH Technical Digest, pp. 39-42, April 2005.
2. T. Kikkawa, et al., Surface-charge controlled AlGaN/GaN-power HFET without current collapse and Gm dispersion, 2001 IEDM Technical Digest, pp. 585-588, December 2001.
3. M. Kanamura, et al., AlGaN/GaN Power HEMTs Using Surface- Charge-Controlled Structure with Recessed Ohmic Technique, Extended Abstracts of 2003 Solid State Devices and Materials, pp. 916- 917, September 2003.
4. J. Nikaido, et al., A Highly Uniform and Reliable AlGaN/GaN, 2005 CS MANTECH Technical Digest, pp. 151-154, April 2005.