Kink and power saturation of 660-nm AlGaInP laser diodes

IEEE Journal of Quantum Electronics

Volumn 41, Issue 6, 2005, Pages 828-832

  Yoshida, Yasuaki ^a   Sasaki, Motoko ^a   Shibata, Kimitaka ^a   Kawazu, Zennpei ^a   Ono, Ken Ichi ^a   Nishiguchi, Harumi ^a   Yagi, Tetsuya ^a   Nishimura, Takashi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Heating; Modeling; Optoelectronic devices; Quantum well lasers; Semiconductor lasers; Temperature

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT REGULATORS; HEAT RESISTANCE; HEATING; MATHEMATICAL MODELS; OPTOELECTRONIC DEVICES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

KINK MECHANISM; POWER SATURATION; SELF HEATING;

SEMICONDUCTOR LASERS;

EID: 20544470162     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.846697     Document Type: Article

References (8)

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