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Physics of the Solid State

Volumn 49, Issue 10, 2007, Pages 1995-1998

The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

(7) Moskalenko, E S a,b Larsson, M a Karlsson, K F a Holtz, P O a Monemar, B b Schoenfeld, W V c Petroff, P M c

a LINKÖPING UNIVERSITY (Sweden)

b IOFFE INSTITUTE (Russian Federation)

c University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35348997131 PISSN: 10637834 EISSN: None Source Type: Journal
DOI: 10.1134/S1063783407100307 Document Type: Article

Times cited : (1)

References (14)

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