Field-effect transistors based on poly(3-hexylthiophene): Effect of impurities

Organic Electronics

Volumn 8, Issue 6, 2007, Pages 727-734

  Urien, Mathieu ^a   Wantz, Guillaume ^a   Cloutet, Eric ^a   Hirsch, Lionel ^a   Tardy, Pascal ^a   Vignau, Laurence ^a   Cramail, Henri ^a   Parneix, Jean Paul ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

Field effect transistor; Nuclear analysis; Poly(3 hexylthiophene); Purity

Indexed keywords

CHLORINE COMPOUNDS; HEXANE; IMPURITIES; MAGNETIC RESONANCE; METHANOL; POLYMERIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

HEXYLTHIOPHENE; NUCLEAR ANALYSIS; PARTICLE INDUCED X-RAY EMISSIONS (PIXE);

FIELD EFFECT TRANSISTORS;

EID: 35348982392     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2007.06.003     Document Type: Article

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