Effect of synthetic impurities on photocarrier transport in poly(s-hexylthiophene)

IEICE Transactions on Electronics

Volumn E83-C, Issue 7, 2000, Pages 1088-1092

  Pandey, Shyam S ^a   Takashima, Wataru ^a   Nagamatstj, Shuichi ^a   Kaneto, Keiichi ^b  

^a Fukuoka 1ST   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Field dependence; Hole mobility; Photocarrier; Poly(s hexylthiophene); Time of flighi method

Indexed keywords

FERRIC IONS; PHOTOCARRIER TRANSPORT; POLYHEXYLTHIOPHENE; SANDWICH CELL CONFIGURATION; SYNTHETIC IMPURITIES; TIME OF FLIGHT TECHNIQUE;

BENZENE; IMPURITIES; IONS; IRON COMPOUNDS; PURIFICATION; REMOVAL; SCHOTTKY BARRIER DIODES; SYNTHESIS (CHEMICAL); TRANSPORT PROPERTIES;

CARRIER MOBILITY;

EID: 0034226718     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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