RBS studies of AlGaN/AlN Bragg reflectors

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 3, 2003, Pages 502-507

  Hirsch, L ^a   Natali, F ^b   Moretto, P ^c   Barriere A S ^a   Byrne, D ^b   Semond, F ^b   Massies, J ^b   Grandjean, N ^b   Antoine Vincent, N ^d   Leymarie, J ^d  

^a CNRS   (France)

^b CRHEA CNRS   (France)

^c CENTRE D ETUDES NUCLÉAIRES DE BORDEAUX GRADIGNAN   (France)

^d UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC FIELDS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; STRAIN;

BRAGG REFLECTORS; INTERNAL ELECTRIC FIELD; MICROCAVITIES; RESIDUAL STRAIN; STRAGGLING EFFECT;

RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 0037308252     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306143     Document Type: Article

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