Orientation and microstructure dependence of electromigration damage in damascene Cu interconnect lines

Materials Science Forum

Volumn 495-497, Issue PART 2, 2005, Pages 1443-1448

  Mirpuri, Kabir Kumar ^a   Szpunar, Jerzy ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

Cu damascene technology; Electromigration; Electron Backscatter Diffraction (EBSD); Interconnects; Microelectronic chip; Orientation Imaging Microscopy (OIM); Texture

Indexed keywords

BACKSCATTERING; CRYSTAL ORIENTATION; ELECTROMIGRATION; ELECTRON DIFFRACTION; MICROELECTRONICS; MICROPROCESSOR CHIPS; SCANNING ELECTRON MICROSCOPY; TEXTURES;

ELECTROMIGRATION DAMAGE; ELECTRON BACKSCATTER DIFFRACTION (EBSD); ORIENTATION IMAGING MICROSCOPY (OIM);

COPPER;

EID: 35348841131     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-975-x.1443     Document Type: Conference Paper

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