ACLV performance dry vs. immersion on 45nm ground rules

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 3, 2007, Pages

  Schroeder, Uwe P ^a   Yap, Chin Chin ^b   Sarma, Chandra S ^a   Thomas, Alan ^c  

^a INFINEON TECHNOLOGIES   (United States)

^b Chartered Semiconductors   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

45nm; ACLV; Immersion

Indexed keywords

FOUNDRY PRACTICE; GATEWAYS (COMPUTER NETWORKS); LOGIC PROGRAMMING; PARAMETER ESTIMATION; SCANNING;

ACLV; BOSSUNG PLOTS; IMMERSION; LOGIC PROCESS; WAFER RESULTS;

MASKS;

EID: 35148875130     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713113     Document Type: Conference Paper

References (4)

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