An Improved On-chip 4-Port Parasitics De-embedding Method with Application to RF CMOS

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Volumn , Issue , 2007, Pages 24-27

  Wei, Xiaoyun ^a   Xia, Kejun ^a   Niu, Guofu ^a   Li, Ying ^a   Sweeney, Susan L ^b   Liang, Qingqing ^b   Wang, Xudong ^b   Taylor, Stewart S ^c  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

4 Port parasitics; Effective gate resistance; On wafer de embedding; RF CMOS

Indexed keywords

ALGORITHMS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; PROBLEM SOLVING;

4-PORT PARASITICS; EFFECTIVE GATE RESISTANCE; ON-WAFER DE-EMBEDDING; RF CMOS;

CMOS INTEGRATED CIRCUITS;

EID: 34547377301     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2007.322760     Document Type: Conference Paper

References (5)

1. M.C.A.M. Koolen, J.A.M. Geelen, and M.P.J.G. Versleijen, "An improved de-embedding technique for on-wafer high frequency characterization, " in. Proc. of IEEE Bipolar/ BiCMOS Circuits and Technology Meeting, pp. 188-191, Sep. 1991.
2. Q. Liang, J.D. Cressler, G. Niu, et al., "A Simple. Four-Port Parasitic De-embedding .Methodology for High-frequency Scattering Parameter and Noise Characterization of SiGe HBTs," IEEE Trans. Microwave Theory & Tech., Vol. 51, no. 11, pp. 2165-2174, Nov. 2003.
3. L.F. Tiemeijer, R.J. Havens, A.M. Jansman, et al., "Comparison of the "Pad-Open-Short" and Open-Short-Load" Deembedding Techniques for Accurate Qn-Wafer RP Characterization of High-Quality Passives," IEEE Trans. Microwave Theory & Tech., vol. 53, no. 2, pp. 723-729, Feb. 2005.
4. T. Jamneala, D. A. Feld, D., Blackham, et al., "Why Reciprocal Procedure Works?" in Technical Digest of IEEE Radio Frequency Integrated Circuits Symposium, pp. 465-469, Jun. 2006.
5. X. Jin, J.-J. Ou, C-H. Chen, et al., "An Effective Gate Resistance Model for CMOS RF and Noise Modeling," in Technical Digest of International Electron Devices Meeting, pp. 961-964, Dec. 1998.