C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition

Science and Technology of Advanced Materials

Volumn 4, Issue 4, 2003, Pages 371-375

  Kobayashi, S ^a,c   Takenobu, T ^a,c   Mori, S ^a,c   Fujiwara, A ^b,c   Iwasa, Y ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

C60; Field effect transistor; Mobility; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; FIELD EFFECT TRANSISTORS; FULLERENES; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY DIFFRACTION ANALYSIS;

FIELD-EFFECT MOBILITY;

THIN FILM TRANSISTORS;

EID: 0242657748     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(03)00064-0     Document Type: Article

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